Part Number
|
IRLMS1503 |
Manufacturer
|
International Rectifier |
Description
|
HEXFET Power MOSFET |
Published
|
Oct 19, 2005 |
Detailed Description
|
PD - 91508D
IRLMS1503
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Ch...
|
Datasheet
|
IRLMS1503
|
Overview
PD - 91508D
IRLMS1503
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET
D D G
1
6
A D D S
VDSS = 30V RDS(on) = 0.
10Ω
2
5
3
4
Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with...
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