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IRLMS1503PBF

International Rectifier
Part Number IRLMS1503PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 28, 2007
Detailed Description www.DataSheet4U.com PD - 95762 IRLMS1503PbF HEXFET® Power MOSFET l l l l l Generation V Technology Micro6 Package Sty...
Datasheet PDF File IRLMS1503PBF PDF File

IRLMS1503PBF
IRLMS1503PBF

Overview
www.
DataSheet4U.
com PD - 95762 IRLMS1503PbF HEXFET® Power MOSFET l l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET Lead-Free D D G 1 6 A D D S VDSS = 30V RDS(on) = 0.
10Ω 2 5 3 4 Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The Micro6™ package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23.
This package is ideal for applications where printed circuit board space is at a premium.
It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Top View Micro6™ Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max.
3.
2 2.
6 18 1.
7 13 ± 20 5.
0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient „ Parameter Min.
––– Typ.
––– Max 75 Units °C/W www.
irf.
com 1 1/14/05 IRLMS1503PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient V (BR)DSS RDS(on) VGS(th) gfs IDSS I GSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage T...


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