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Part Number
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KMM5361205C2W |
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Manufacturer
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Samsung Semiconductor |
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Description
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1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo |
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Published
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Oct 26, 2005 |
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Detailed Description
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DRAM MODULE
KMM5361205C2W/C2WG
1Mx36 DRAM SIMM
(1MX16 Base)
Revision 0.0 November 1997
-1-
Rev. 0.0 (Nov. 1997)
DR...
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Datasheet
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KMM5361205C2W
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Overview
DRAM MODULE
KMM5361205C2W/C2WG
1Mx36 DRAM SIMM
(1MX16 Base)
Revision 0.
0 November 1997
-1-
Rev.
0.
0 (Nov.
1997)
DRAM MODULE
Revision History
Version 0.
0 (November 1997)
• Changed module PCB from 6-Layer to 4-Layer.
KMM5361205C2W/C2WG
• Changed Module Part No.
from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .
-2-
Rev.
0.
0 (Nov.
1997)
DRAM MODULE
KMM5361205C2W/C2WG
KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh,
GENERAL DESCRIPTION
The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.
The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ pack...
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