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KMM5361205C2W

Samsung Semiconductor
Part Number KMM5361205C2W
Manufacturer Samsung Semiconductor
Description 1MBx36 DRAM Simm Using 1MBx16 And 4MB Quad Cas Edo
Published Oct 26, 2005
Detailed Description DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DR...
Datasheet PDF File KMM5361205C2W PDF File

KMM5361205C2W
KMM5361205C2W

Overview
DRAM MODULE KMM5361205C2W/C2WG 1Mx36 DRAM SIMM (1MX16 Base) Revision 0.
0 November 1997 -1- Rev.
0.
0 (Nov.
1997) DRAM MODULE Revision History Version 0.
0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer.
KMM5361205C2W/C2WG • Changed Module Part No.
from KMM5361205CW/CWG to KMM5361205C2W/C2WG caused by PCB revision .
-2- Rev.
0.
0 (Nov.
1997) DRAM MODULE KMM5361205C2W/C2WG KMM5361205C2W/C2WG Fast Page Mode with Extended Data Out 1M x 36 DRAM SIMM using 1Mx16 and 4M Quad CAS EDO, 1K Refresh, GENERAL DESCRIPTION The Samsung KMM5361205C2W is a 1Mx36bits Dynamic RAM high density memory module.
The Samsung KMM5361205C2W consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ package and one CMOS 1Mx4 bit Quad CAS with EDO DRAM in 24-pin SOJ package mounted on a 72-pin glassepoxy substrate.
A 0.
1 or 0.
22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.
The KMM5361205C2W is a Single In-line Memory Module with edge connections and is intended for m...


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