SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
KRC881T~KRC886T
EPITAXIAL PLANAR
NPN TRANSISTOR
E
FEATURES
High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
C A F G
K 1
B
K 6
Low on resistance : Ron=1 (Typ.
) (IB=5mA)
2
5 4
DIM A B C D E
D
F G H I J K L
3
MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 +
0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55
J
C R1
6
5
4
B
Q1
Q2
1.
2.
3.
4.
5.
6.
Q1 Q1 Q2 Q2 Q2 Q1
EMITTER BASE COLLECTOR EMITTER ...