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KRC881T

Korea Electronics
Part Number KRC881T
Manufacturer Korea Electronics
Description (KRC881T - KRC886T) EPITAXIAL PLANAR NPN TRANSISTOR
Published Oct 28, 2005
Detailed Description SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. KRC881T~KRC886T EPITAXIAL PLANAR NPN TRAN...
Datasheet PDF File KRC881T PDF File

KRC881T
KRC881T

Overview
SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
KRC881T~KRC886T EPITAXIAL PLANAR NPN TRANSISTOR E FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.
) (VCE=-2V, IC=-4mA) With Built-in Bias Resistors.
Simplify Circuit Design.
Reduce a Quantity of Parts and Manufacturing Process.
C A F G K 1 B K 6 Low on resistance : Ron=1 (Typ.
) (IB=5mA) 2 5 4 DIM A B C D E D F G H I J K L 3 MILLIMETERS _ 0.
2 2.
9 + 1.
6+0.
2/-0.
1 _ 0.
05 0.
70 + _ 0.
1 0.
4 + 2.
8+0.
2/-0.
3 _ 0.
2 1.
9 + 0.
95 _ 0.
05 0.
16 + 0.
00-0.
10 0.
25+0.
25/-0.
15 0.
60 0.
55 J C R1 6 5 4 B Q1 Q2 1.
2.
3.
4.
5.
6.
Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR E 1 2 3 MAXIMUM RATING (Ta=25 Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC PC * Tj Tstg 0.
8 ) RATING 50 20 25 300 0.
9 150 -55 150 UNIT V V V mA W CHARACTERISTIC * Package mounted on a ceramic board (600 MARK SPEC TYPE KRC881T KRC882T KRC883T KRC884T KRC885T KRC886T hFE classification B MQB MRB MSB MTB MUB MVB 1 2 3 Marking h FE Rank Type Name 6 5 4 2002.
12.
5 Revision No : 2 I EQUIVALENT CIRCUIT EQUIVALENT CIRCUIT (TOP VIEW) L G J H TS6 Lot No.
1/2 KRC881T~KRC886T ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC881T KRC882T Input Resistor KRC883T KRC884T KRC885T KRC886T Transition Frequency Collector Output Capacitance * Characteristic of Transistor Only.
Note) hFE Classification B:350 1200 fT * Cob VCE=6V, IC=4mA, VCB=10V, IE=0, f=1MHz R1 SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE TEST CONDITION IC=1mA IC=50 A IE=50 A VCB=50V, IE=0 IC=30mA, IB=3mA VCE=2V, IC=4mA MIN.
20 50 25 350 TYP.
2.
2 4.
7 5.
6 6.
8 10 22 30 4.
8 MAX...


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