DATA SHEET
SILICON
TRANSISTORS
2SD1616, 2SD1616A
NPN SILICON EPITAXIAL
TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES
• Low VCE(sat): VCE(sat) = 0.
15 V TYP.
(IC = 1.
0 A, IB = 50 mA) • Large PT in small dimension with versatility PT = 0.
75 W, VCEO = 50/60 V, IC(DC) = 1.
0 A • Complementary
transistor with the 2SB1116 and 1116A
PACKAGE DRAWING (UNIT: mm)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(Pulse)* PT Tj Tstg Ratings 2SD1616 2S...