IRFP150A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.032 Ω (Typ.) Ο IRFP150A BVDSS = 100 V RDS(on) = 0.04 Ω ID = 43 A TO-3P 1 2 3 1.Gate 2. Drain 3. Sou...