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IRFP150

Fairchild Semiconductor
Part Number IRFP150
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFET
Published Aug 21, 2014
Detailed Description N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 200...
Datasheet PDF File IRFP150 PDF File

IRFP150
IRFP150

Overview
N ESIG W D CT E N FOR ODU DED UTE PR N E STIT OMM REC LE SUB 150N T O N FP SIB Data IR Sheet POS S IRFP150 January 2002 40A, 100V, 0.
055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17431.
Features • 40A, 100V • rDS(ON) = 0.
055Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFP150 PACKAGE TO-247 BRAND IRFP150 Symbol D NOTE: When ordering, include the entire part number.
G S Packaging JEDEC STYLE TO-247 TOP VIEW SOURCE DRAIN GATE DRAIN (FLANGE) ©2002 Fairchild Semiconductor Corporation IRFP150 Rev.
B IRFP150 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFP150 100 100 40 26 160 ±20 180 1.
44 150 -55 to 150 300 260 UNITS V V A A A V W W/oC mJ oC oC oC Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID TC = 100oC .
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