Power F-MOS FETs 2SK1611 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.
7±0.
1 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 4.
2±0.
2 s Applications 16.
7±0.
3 7.
5±0.
2 q High-speed switching (switching power supply, AC adaptor) q For high-frequency power amplification φ3.
1±0.
1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 800 ±30 ±3 ±6 20 50 2 150 −55 to +150 Unit V V A A mJ 4.
0 1.
4±0.
1 1.
3±0.
2 14.
0±0.
5 Solder Dip 0.
5 +0.
2 –0.
1 0.
8±0.
1 2.
54±0.
25 5.
08...

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