Part Number
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STE38NB50 |
Manufacturer
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ST Microelectronics |
Description
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N - CHANNEL PowerMESH MOSFET |
Published
|
Nov 14, 2005 |
Detailed Description
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®
STE38NB50
N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
TYPE STE38NB50
s s s s s s s
V DSS 500 V
R DS...
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Datasheet
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STE38NB50
|
Overview
®
STE38NB50
N - CHANNEL 500V - 0.
11 Ω - 38A - ISOTOP PowerMESH™ MOSFET
TYPE STE38NB50
s s s s s s s
V DSS 500 V
R DS(on) 0.
13 Ω
ID 38 A
TYPICAL RDS(on) = 0.
11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge an...
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