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STE38NB50F

ST Microelectronics
Part Number STE38NB50F
Manufacturer ST Microelectronics
Description N - CHANNEL PowerMESH MOSFET
Published Nov 14, 2005
Detailed Description ® STE38NB50F N - CHANNEL 500V - 0.11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE STE38NB50F s s s s s s s V DSS 500 V R ...
Datasheet PDF File STE38NB50F PDF File

STE38NB50F
STE38NB50F

Overview
® STE38NB50F N - CHANNEL 500V - 0.
11 Ω - 38A - ISOTOP PowerMESH™ MOSFET TYPE STE38NB50F s s s s s s s V DSS 500 V R DS(on) < 0.
14 Ω ID 38 A TYPICAL RDS(on) = 0.
11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED VOLTAGE SPREAD DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate ...


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