PD - 95326
IRG4IBC30WPbF
INSULATED GATE BIPOLAR
TRANSISTOR
Features
Benefits
Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.
5kV, 60s insulation voltage Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free
C
VCES = 600V
G E
VCE(on) typ.
= 2.
1V
@VGE = 15V, IC = 12 A
n-channel
Lower switching losses allow more cost-effective operation than power MOSFETs up ...