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IRG4IBC30WPBF

Part Number	IRG4IBC30WPBF
Manufacturer	International Rectifier
Description	INSULATED GATE BIPOLAR TRANSISTOR
Published	Nov 24, 2005
Detailed Description	PD - 95326 IRG4IBC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Benefits Designed expressly for Switch-Mode Po...
Datasheet	IRG4IBC30WPBF PDF File

Overview

PD - 95326 IRG4IBC30WPbF INSULATED GATE BIPOLAR TRANSISTOR Features Benefits Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.
5kV, 60s insulation voltage Industry-benchmark switching losses improve efficiency of all power supply topologies 50% reduction of Eoff parameter Low IGBT conduction losses Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability • Industry standard Isolated TO-220 FullpakTM outline • Lead-Free C VCES = 600V G E VCE(on) typ.
= 2.
1V @VGE = 15V, IC = 12 A n-channel Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) Of particular benefit to single-ended converters and boost PFC topologies 150W and higher Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) TO-220 FULLP AK Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw.
Max.
600 17 8.
4 92 92 ± 20 180 45 18 -55 to + 150 300 (0.
063 in.
(1.
6mm from case ) 10 lbf•in (1.
1N•m) Units V A V mJ W °C Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case - IGBT Junction-to-Ambient, typical socket mount Weight Typ.
––– ––– 2.
0 (0.
07) Max.
2.
8 65 ––– Units °C/W g (oz) www.
irf.
com 1 6/1/04 IRG4IBC30WPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage...

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IRG4IBC30WPBF INSULATED GATE BIPOLAR TRANSISTOR - International Rectifier

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