DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect
Transistor designed for high speed switching applications.
3.
0 ±0.
3
PACKAGE DIMENSIONS
(in millimeter) 10.
6 MAX.
10.
0
5.
9 MIN.
12.
7 MIN.
15.
5 MAX.
3.
6 ±0.
2
4.
8 MAX.
1.
3 ±0.
2
FEATURES
• Low On-Resistance
RDS(on)1 = 40 mΩ MAX.
(@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX.
(@ VGS = 4 V, ID = 15 A)
4 1.
3 ±0.
2 0.
75 ±0.
1 2.
54 1 2 3
• Low Ciss Ciss = 1500 pF TYP.
• Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings
QUALITY GRADE
Standard
Please refer to "Quality grade on NEC Semiconductor Devices" (Document n...