Part Number
|
TMD1013-1-431 |
Manufacturer
|
Toshiba |
Description
|
Microwave Power MMIC Amplifier |
Published
|
Dec 19, 2005 |
Detailed Description
|
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES High Power P1dB=33dBm(TYP.) High Pow...
|
Datasheet
|
TMD1013-1-431
|
Overview
MICROWAVE POWER MMIC AMPLIFIER
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES High Power P1dB=33dBm(TYP.
) High Power Added Efficiency ηadd=14%(TYP.
)
TMD1013-1-431 TMD1013-1-431
High Gain
G1dB=25dB(TYP.
)
Operable Frequency : f=10.
0-12.
0GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dB °C °C RATINGS 15 -10 7 -30 to +80 -65 to +175
RF PERFORMANCE SPECIFICATIONS (Ta=25 °C) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current IDD ηadd IM3 VSWRin 2 Tone @ Po=19dBm(SCL)...
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