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TMD1013-1-431

Toshiba
Part Number TMD1013-1-431
Manufacturer Toshiba
Description Microwave Power MMIC Amplifier
Published Dec 19, 2005
Detailed Description MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ „ High Power P1dB=33dBm(TYP.) High Pow...
Datasheet PDF File TMD1013-1-431 PDF File

TMD1013-1-431
TMD1013-1-431

Overview
MICROWAVE POWER MMIC AMPLIFIER MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ „ High Power P1dB=33dBm(TYP.
) High Power Added Efficiency ηadd=14%(TYP.
) „ „ TMD1013-1-431 TMD1013-1-431 High Gain G1dB=25dB(TYP.
) Operable Frequency : f=10.
0-12.
0GHz.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C) CHARACTERISTICS DRAIN SUPPLY VOLTAGE GATE SUPPLY VOLTAGE INPUT POWER FLANGE TEMPERATURE STORAGE TEMPERATURE SYMBOL VDD VGG Pin Tf Tstg UNIT V V dB °C °C RATINGS 15 -10 7 -30 to +80 -65 to +175 RF PERFORMANCE SPECIFICATIONS (Ta=25 °C) CHARACTERISTICS Operating Frequency Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current IDD ηadd IM3 VSWRin 2 Tone @ Po=19dBm(SCL)...


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