C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 FEATURES • HIGH OUTPUT POWER: 1 W • HIGH LINEAR GAIN: 9.
0 dB • HIGH EFFICIENCY: 37% (PAE) • INDUSTRY STANDARD PACKAGING • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 ABSOLUTE MAXIMUM RATINGS1 (TC = 25 °C unless otherwise noted) SYMBOLS VDS VGD VGS IDS IGS PT TCH TSTG PARAMETERS Drain to Source Voltage Gate to Drain Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature UNITS V V V RATINGS 15 -18 -12 IDSS 6.
0 6.
0 175 -65 to +175 Total Power Dissipation DESCRIPTION The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devic...

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