SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field-Effect
Transistor
N–Channel Enhancement–Mode MOSFET
Designed primarily for wideband large–signal output and driver stages from 30–200 MHz.
• Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 45 Watts Power Gain = 17 dB (Min) Efficiency = 60% (Min) • Excellent Thermal Stability, Ideally Suited for Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested for Load Mismatch At All Phase Angles with 30:1 VSWR • Low Crss – 8 pF @ VDS = 28 V • Gold Top Metal Typical Data For Power Amplifier Applications in Industrial, Commercial and Amateur Radio Equipmen...