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MRF174

Part Number	MRF174
Manufacturer	Tyco Electronics
Description	N-CHANNEL MOS BROADBAND RF POWER FET
Published	Dec 26, 2005
Detailed Description	SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N–Ch...
Datasheet	MRF174 PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA Order this document by MRF174/D The RF MOSFET Line RF Power Field Effect Transistor N–Channel Enhancement–Mode Designed primarily for wideband large–signal output and driver stages up to 200 MHz frequency range.
• Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 125 Watts Minimum Gain = 9.
0 dB Efficiency = 50% (Min) • Excellent Thermal Stability, Ideally Suited For Class A Operation • Facilitates Manual Gain Control, ALC and Modulation Techniques • 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR • Low Noise Figure — 3.
0 dB Typ at 2.
0 A, 150 MHz D MRF174 125 W, to 200 MHz N–CHANNEL MOS BROADBAND RF POWER FET G S CASE 211–11, STYLE 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Gate–Source Voltage Drain Current — Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Value 65 65 ± 40 13 270 1.
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