Part Number
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STH8NB90FI |
Manufacturer
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ST Microelectronics |
Description
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N-CHANNEL MOSFET |
Published
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Jan 1, 2006 |
Detailed Description
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N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET
TYPE STW8NB90 STH8NB90FI
s s s s s
STW8NB90 STH8NB90FI...
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Datasheet
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STH8NB90FI
|
Overview
N-CHANNEL 900V - 1.
1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET
TYPE STW8NB90 STH8NB90FI
s s s s s
STW8NB90 STH8NB90FI
VDSS 900 V 900 V
RDS(on) 1.
45 Ω 1.
45 Ω
ID 8A 5A
TYPICAL RDS(on) = 1.
1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247
3 2 1
3 2 1
DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate ...
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