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STH8NB90FI

ST Microelectronics
Part Number STH8NB90FI
Manufacturer ST Microelectronics
Description N-CHANNEL MOSFET
Published Jan 1, 2006
Detailed Description N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI...
Datasheet PDF File STH8NB90FI PDF File

STH8NB90FI
STH8NB90FI

Overview
N-CHANNEL 900V - 1.
1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET TYPE STW8NB90 STH8NB90FI s s s s s STW8NB90 STH8NB90FI VDSS 900 V 900 V RDS(on) < 1.
45 Ω < 1.
45 Ω ID 8A 5A TYPICAL RDS(on) = 1.
1 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest R DS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate ...


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