Part Number
|
2SK662 |
Manufacturer
|
Panasonic Semiconductor |
Description
|
Silicon N-Channel Junction FET |
Published
|
Jan 6, 2006 |
Detailed Description
|
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
un...
|
Datasheet
|
2SK662
|
Overview
Silicon Junction FETs (Small Signal)
2SK0662 (2SK662)
Silicon N-Channel Junction FET
For low-frequency amplification
unit: mm
(0.
425)
I Features
0.
3+0.
1 –0.
0 3
0.
15+0.
10 –0.
05
G High mutual conductance gm G Low noise type G S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.
1.
25±0.
10
2.
1±0.
1 5°
1
2
(0.
65) (0.
65) 1.
3±0.
1
I Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Drain voltage Drain current Gate current Allowable power dissipation Junction temperature Storage temperature Symbol VDSX VGDO ID IG PD Tj Tstg Ratings 30 −30 20 10 150 125 −55 to +125 Unit V V mA mA mW °C °C
2.
0±0.
2 10°
1:...
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