Silicon MOS FETs (Small Signal) 2SK0614 (2SK614) Silicon N-Channel MOS FET For switching unit: mm I Features 5.
0±0.
2 4.
0±0.
2 0.
7±0.
1 0.
7±0.
2 12.
9±0.
5 G Low ON-resistance RDS(on) G High-speed switching G Allowing to be driven directly by CMOS and TTL I Absolute Maximum Ratings (Ta = 25°C) Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 80 20 ±0.
5 ±1 750 150 −55 to +150 Unit V V A A mW °C °C 0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 1 2 3 5.
1±0.
2 0.
45+0.
15 –0.
1 2.
5+0.
6 –0.
2 1: Source 2: Drain 3: Gate JEDEC: TO-92 EIAJ: SC-43 TO-92-A1 Package I Ele...

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