DATA SHEET
SILICON
TRANSISTOR
2SC2721
NPN SILICON EPITAXIAL
TRANSISTOR FOR HIGH-FREQUENCY AMPLIFIERS AND MID-SPEED SWITCHING
FEATURES • Complementary
transistor with 2SA1154 • High PT in small dimension and high voltage
PT = 1 W, VCEO = 60 V
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 60 60 5.
0 0.
7 1.
0 1 150
−55 to +150
Unit V V V A A W °C °C
PACKAGE DRAWING (UNIT: mm)
ELECTRICAL CHARACTERISTICS (T...