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Part Number
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M01N60 |
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Manufacturer
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ETC |
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Description
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N Channel MOSFET |
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Published
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Jan 16, 2006 |
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Detailed Description
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N Channel MOSFET 1.0A
M01N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE
Robust High Voltage Temination. Avalanche Energy...
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Datasheet
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M01N60
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Overview
N Channel MOSFET 1.
0A
M01N60
PIN CONFIGURATION
TO-251 TO-252
FEATURE
Robust High Voltage Temination.
Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature
1.
Gate 2.
Drain 3.
Source
ABSOLUTE MAXIMUM RATINGS
RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Junction to Case - Junction to...
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