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M01N60

ETC
Part Number M01N60
Manufacturer ETC
Description N Channel MOSFET
Published Jan 16, 2006
Detailed Description N Channel MOSFET 1.0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination. Avalanche Energy...
Datasheet PDF File M01N60 PDF File

M01N60
M01N60

Overview
N Channel MOSFET 1.
0A M01N60 PIN CONFIGURATION TO-251 TO-252 FEATURE Robust High Voltage Temination.
Avalanche Energy Specified Source-to Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circurits IDSS and VDS(on) Specified at Elevated Temperature 1.
Gate 2.
Drain 3.
Source ABSOLUTE MAXIMUM RATINGS RATING Drain to Current - Continuous - Pulsed Gate-to-Source Voltage – Continue - Non-repetitive Total Power Dissipation TO-251/252 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy – Tj = 25¢J (VDD =100V, VGS = 10V, IAS = 2A, L = 10mH, RG = 25£[) Thermal Resistance – Junction to Case - Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8’’ form 10 seconds SYMBOL VALUE ID IDM VGS VGSM PD 50 TJ, TSTG EAS £ c £c -55 to 150 20 1.
0 62.
5 260 ¢J mJ ¢J /W ¢J 1.
0 5.
0 +/-30 +/-40 UNIT A V V W JC JA TL STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 Page 1 N Channel MOSFET 1.
0A M01N60 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS¡] PARAMETERS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage CurrentForward Gate Threshhold Voltage Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-Off Delay Time Rise Time Fall Time Total Gate Charge Gate-Drain Charge Gate-Drain Charge Intemal Drain Inductance Internal Drain Inductance SYMBO MIN L V(BR)DSS 600 IDSS IGSSF VGS(th) RDS(on) Ciss Coss Crss ton toff tr tf Qg Qgd Qgs LD Ls 210 28 9 8 18 21 24 8.
5 8.
5 1.
8 4.
5 7.
5 2.
0 TYP MAX UNIT Vdc 1.
0 0.
25 100 4.
0 8 mA mA nA V Ohm pF pF pF nS nS nS nS nC nC nC nH nH Ta=25¢J¡^ CONDITION VGS=0, ID=250uA VDS=600V, VGS=0 VDS=480V, VGS=0, Tj=125¢J VGSR=20V, VDS=0 VDS=VGS, ID=250uA VGS=10V, ID=0.
6A* VDS=25V, VGS=0, f=1 MHz VDS=300V, ID=1.
0A, VGS=10V, RG=18£[ VDS=400V, ID=1.
0A VGS=10V* Measured from the drain lead 0.
25’’ From pack...


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