STS4C3F60L
N-CHANNEL 60V - 0.
045 Ω - 4A SO-8 P-CHANNEL 60V - 0.
100 Ω - 3A SO-8 StripFET™ MOSFET
Table 1: General Features
TYPE STS4C3F60L (N-Channel) STS4C3F60L (P-Channel)
s s s
Figure 1: Package
RDS(on) 0.
055 Ω 0.
120 Ω ID 4A 3A
VDSS 60 V 60 V
s
TYPICAL RDS(on) (N-Channel) = 0.
045 Ω TYPICAL RDS(on) (P-Channel) = 0.
100 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting
transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore ...