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STS4C3F60L

ST Microelectronics
Part Number STS4C3F60L
Manufacturer ST Microelectronics
Description StripFET MOSFET
Published Jan 23, 2006
Detailed Description STS4C3F60L N-CHANNEL 60V - 0.045 Ω - 4A SO-8 P-CHANNEL 60V - 0.100 Ω - 3A SO-8 StripFET™ MOSFET Table 1: General Feature...
Datasheet PDF File STS4C3F60L PDF File

STS4C3F60L
STS4C3F60L

Overview
STS4C3F60L N-CHANNEL 60V - 0.
045 Ω - 4A SO-8 P-CHANNEL 60V - 0.
100 Ω - 3A SO-8 StripFET™ MOSFET Table 1: General Features TYPE STS4C3F60L (N-Channel) STS4C3F60L (P-Channel) s s s Figure 1: Package RDS(on) < 0.
055 Ω < 0.
120 Ω ID 4A 3A VDSS 60 V 60 V s TYPICAL RDS(on) (N-Channel) = 0.
045 Ω TYPICAL RDS(on) (P-Channel) = 0.
100 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE SO-8 DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Figure 2: Internal Schematic Diagram APPLICATIONS s DC/DC CONVERTERS s BACK LIGHT INVERTER FOR LCD Table 2: Order Codes PART NUMBER STS4C3F60L MARKING S4C3F60L PACKAGE SO-8 PACKAGING TAPE & REEL Rev.
2 September 2004 1/11 STS4C3F60L Table 3: Absolute Maximum ratings Symbol VDS VDGR VGS ID ID IDM ( ) PTOT Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at TC = 25°C Single Operating Drain Current (continuous) at TC = 100°C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25°C Operating Junction Temperature Storage Temperature 4 2.
5 16 2 -55 to 150 Value N-CHANNEL 60 60 ± 16 3 1.
9 12 P-CHANNEL V V V A A A W °C Unit ( ) Pulse width limited by safe operating area Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed Table 4: Thermal Data Rthj-amb (1) Thermal Resistance Junction-ambient 62.
5 °C/W (1) When mounted on 1 inch² pad of 2 oz.
copper, t ≤ 10 s ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) Table 5: On/Off Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch n-ch p-ch ...


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