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AS4C1M16E5

Part Number AS4C1M16E5
Manufacturer Alliance Semiconductor
Description 5V 1M x 16 CMOS DRAM
Published Mar 5, 2006
Detailed Description $XJXVW  Š $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV • Organization: 1,048,576 words × 16 bits • High speed - 45...
Datasheet AS4C1M16E5





Overview
$XJXVW  Š $6&0( 9 0î &026 '5$0 ('2 )HDWXUHV • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time • 1024 refresh cycles, 16 ms refresh interval - RAS-only or CAS-before-RAS refresh Read-modify-write • TTL-compatible, three-state DQ • JEDEC standard package and pinout - 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2 • Low power consumption - Active: 740 mW max (AS4C1M16E5-60) - Standby: 5.
5 mW max, CMOS DQ • 5V power supply • Industrial and commercial temperature available • Extended data out 3LQ DUUDQJHPHQW 62Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0 A...






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