Part Number
|
AS4C1M16E5 |
Manufacturer
|
Alliance Semiconductor |
Description
|
5V 1M x 16 CMOS DRAM |
Published
|
Mar 5, 2006 |
Detailed Description
|
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• Organization: 1,048,576 words × 16 bits • High speed
- 45...
|
Datasheet
|
AS4C1M16E5
|
Overview
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• Organization: 1,048,576 words × 16 bits • High speed
- 45/50/60 ns RAS access time - 20/20/25 ns hyper page cycle time - 10/12/15 ns CAS access time
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh Read-modify-write
• TTL-compatible, three-state DQ • JEDEC standard package and pinout
- 400 mil, 42-pin SOJ - 400 mil, 44/50-pin TSOP 2
• Low power consumption
- Active: 740 mW max (AS4C1M16E5-60) - Standby: 5.
5 mW max, CMOS DQ
• 5V power supply
• Industrial and commercial temperature available
• Extended data out
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62Vcc DQ1 DQ2 DQ3 '4 Vcc DQ5 DQ6 DQ7 DQ8 NC NC WE RAS NC NC A0 A...
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