Part Number
|
AS4C4M4E1 |
Manufacturer
|
Alliance Semiconductor |
Description
|
4M x 4 CMOS DRAM |
Published
|
Mar 5, 2006 |
Detailed Description
|
May 2001
®
AS4C4M4E1
4M×4 CMOS DRAM (EDO) family Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/6...
|
Datasheet
|
AS4C4M4E1
|
Overview
May 2001
®
AS4C4M4E1
4M×4 CMOS DRAM (EDO) family Features
• Organization: 4,194,304 words × 4 bits • High speed
- 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time
• TTL-compatible, three-state I/O • JEDEC standard package
- 300 mil, 24/26-pin SOJ - 300 mil, 24/26-pin TSOP
• Low power consumption
- Active: 908 mW max - Standby: 5.
5 mW max, CMOS I/O
• Extended data out • Refresh
- 2048 refresh cycles, 32 ms refresh interval for AS4C4M4E1 - RAS-only or CAS-before-RAS refresh
• 5V power supply • Latch-up current ≥ 200 mA • ESD protection ≥ 2000 volts • Industrial and commercial temperature available
Pin arrangement
SOJ
VCC I/O0 I/O1 WE RAS NC A10 A...
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