H5N5004PL

H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. 2001 Features • • • • • • Low on-resistance: R DS(on) = 0.09 typ. Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD...