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H5N5004PL

Hitachi
Part Number H5N5004PL
Manufacturer Hitachi
Description Silicon N-Channel MOSFET
Published Mar 13, 2006
Detailed Description H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st. Edition Mar. ...
Datasheet PDF File H5N5004PL PDF File

H5N5004PL
H5N5004PL

Overview
H5N5004PL Silicon N Channel MOS FET High Speed Power Switching ADE-208-1381 (Z) Target Specification 1st.
Edition Mar.
2001 Features • • • • • • Low on-resistance: R DS(on) = 0.
09 typ.
Low leakage current: IDSS = 10 µA max (at VDS = 500 V) High speed switching: tf = 280 ns typ (at VGS = 10 V, VDD = 250 V, ID = 25 A) Low gate charge: Qg = 220 nC typ (at VDD = 400 V, VGS = 10 V, ID = 50 A) Avalanche ratings Built-in fast recovery diode: trr = 190 ns typ Outline TO-3PL w w .
D w G t a D S S a 1 2 e h 3 t e U 4 .
c m o 1.
Gate 2.
Drain (Flange) 3.
Source w w w .
D a S a t e e h U 4 t m o .
c H5N5004PL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1.
PW 10 µs, duty cycle 1% 2.
Value at Tc = 25°C 3.
...


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