MP4208 TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV in One) MP4208 High Power High Speed Switching Applications Hammer Drive, Pulse Motor Drive and Inductive Load Switching • • • • • • −4 V gate drive available Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.
2 Ω (typ.
) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.
8 to −2.
0 V (ID = −1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Gate-source voltage Drain current Peak drain cur...

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