DatasheetsPDF.com

MP4212

Toshiba Semiconductor
Part Number MP4212
Manufacturer Toshiba Semiconductor
Description HIGH POWER SPEED SWITCHING APPLICATIONS H SWITCH DRIVER
Published Mar 20, 2006
Detailed Description MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed S...
Datasheet PDF File MP4212 PDF File

MP4212
MP4212

Overview
MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One) MP4212 High Power High Speed Switching Applications H-Switch Driver • • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.
) (N-ch) 160 mΩ (typ.
) (P-ch) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) (Nch) 4.
0 S (typ.
) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (1-device operation, Ta = 25°C) Drain power dissipation (4-device operation, Ta = 25°C) Single pulse avalanche energy (Note 1) Avalanche current Repetitive avalanche energy (Note 2) 4-device operation Channel temperature Storage temperature range 1-device operation DC Pulse Symbol VDSS VDGR VGSS ID IDP PD Rating Nch 60 60 ±20 5 20 2.
0 Pch −60 −60 ±20 −5 −20 Unit V V V A JEDEC JEITA TOSHIBA ― ― 2-25A1C Weight: 2.
1 g (typ.
) W PDT EAS IAR EAR EART Tch Tstg 129 5 4.
0 273 −5 0.
2 W mJ A mJ 0.
4 150 −55 to 150 °C °C Note 1: Condition fo avalanche energy (single pulse) measurement Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A Pch: VDD = −25 V, starting Tch = 25°C, L = 14.
84 mH, RG = 25 Ω, IAR = −5 A Note 2: Repetitive rating; pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device.
Please handle with caution.
1 2004-07-01 MP4212 Array Configuration 10 6 8 7 3 9 5 2 1 4 Thermal Characteristics Characteristics Thermal resistance from channel to ambient (4-device operation, Ta = 25°C) Maximum lead temperature for soldering purposes (3.
2 mm from case for t = 10 s) TL 260 °C Symbol Max Unit ΣRth...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)