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Part Number
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MP4212 |
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Manufacturer
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Toshiba Semiconductor |
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Description
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HIGH POWER SPEED SWITCHING APPLICATIONS H SWITCH DRIVER |
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Published
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Mar 20, 2006 |
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Detailed Description
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MP4212
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One)
MP4212
High Power High Speed S...
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Datasheet
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MP4212
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Overview
MP4212
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Four L2-π-MOSV in One)
MP4212
High Power High Speed Switching Applications H-Switch Driver
• • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4-device operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.
) (N-ch) 160 mΩ (typ.
) (P-ch) High forward transfer admittance: |Yfs| = 5.
0 S (typ.
) (Nch) 4.
0 S (typ.
) (Pch) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = 100 µA (max) (VDS = 60 V) Enhancement-mode: Vth = 0.
8 to 2.
0 V (VDS = 10 V, ID = 1 mA) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics...
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