Part Number
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MP4211 |
Manufacturer
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Toshiba Semiconductor |
Description
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POWER MOSFET MODULE SILICON P CHANNEL MOS TYPE |
Published
|
Mar 20, 2006 |
Detailed Description
|
MP4211
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne)
MP4211
High Power, High Speed Swi...
|
Datasheet
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MP4211
|
Overview
MP4211
TOSHIBA Power MOS FET Module Silicon P Channel MOS Type (Four L2-π-MOSV inOne)
MP4211
High Power, High Speed Switching Applications For Printer Head Pin Driver and Pulse Motor Driver For Solenoid Driver
• • • • • • • 4-V gate drivability Small package by full molding (SIP 10 pin) High drain power dissipation (4 devices operation) : PT = 4 W (Ta = 25°C) Low drain-source ON resistance: RDS (ON) = 0.
16 Ω (typ.
) High forward transfer admittance: |Yfs| = 4.
0 S (typ.
) Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V) IDSS = −100 µA (max) (VDS = −60 V) Enhancement-mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA) Industrial Applications Unit: mm
Maximum Ratings (Ta = 25°C)
Characte...
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