N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) 4Ω 4Ω ID 2.9 A 2.1 A TYPICAL RDS(on) = 3.3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE S...
ST Microelectronics