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STP3NA60

ST Microelectronics
Part Number STP3NA60
Manufacturer ST Microelectronics
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Published Mar 28, 2006
Detailed Description STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI s s s s s s s VDSS ...
Datasheet PDF File STP3NA60 PDF File

STP3NA60
STP3NA60

Overview
STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STP3NA60 STP3NA60FI s s s s s s s VDSS 600 V 600 V R DS(on) <4Ω <4Ω ID 2.
9 A 2.
1 A TYPICAL RDS(on) = 3.
3 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 3 1 2 3 1 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology.
The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter ISOWATT220 INTERNAL SCHEMATIC DIAGRAM Value STP3NA60 STP3NA60FI 600 600 ± 30 o Unit V DS V DGR V GS ID ID I DM ( •) P tot V ISO T stg Tj Drain-source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature o V V V 2.
1 1.
3 11.
6 40 0.
32 2000 A A A W W/o C V o o 2.
9 1.
8 11.
6 80 0.
64  -65 to 150 150 C C (•) Pulse width limited by safe operating area November 1996 1/10 STP3NA60/FI THERMAL DATA TO-220 R thj-case R thj-amb R t hc-sink Tl Thermal Resistance Junction-case Max 1.
56 62.
5 0.
5 300 Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose ISOWATT220 3.
12 o o o C/W C/W C/W o C AVALANCHE CHARACTERISTICS Symbol IA R E AS E AR IA R Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy...


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