Part Number
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TC58V64DC |
Manufacturer
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Toshiba Semiconductor |
Description
|
16M-Bit CMOS NAND EPROM |
Published
|
Apr 6, 2006 |
Detailed Description
|
TC58V64DC
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M × 8 BITS) CMOS NAND E PROM (8M...
|
Datasheet
|
TC58V64DC
|
Overview
TC58V64DC
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
64-MBIT (8M × 8 BITS) CMOS NAND E PROM (8M BYTE SmartMedia DESCRIPTION
2
TM
)
The TC58V64 is a single 3.
3-V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 16 pages × 1024 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (8 Kbytes + 512 bytes: 528 bytes × 16 pages).
The TC58V64 is a serial-type memory device which utilizes the I/O pins for both address and...
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