DatasheetsPDF.com

TC58V64BFT

Toshiba Semiconductor
Part Number TC58V64BFT
Manufacturer Toshiba Semiconductor
Description 64M-Bit CMOS NAND EPROM
Published Apr 6, 2006
Detailed Description TC58V64BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM ...
Datasheet PDF File TC58V64BFT PDF File

TC58V64BFT
TC58V64BFT

Overview
TC58V64BFT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 64-MBIT (8M ´ 8 BITS) CMOS NAND E PROM DESCRIPTION The TC58V64B is a single 3.
3 V 64-Mbit (69,206,016) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes ´ 16 pages ´ 1024 blocks.
The device has a 528-byte static register which allows program and read data to be transferred between the register and the memory cell array in 528-byte increments.
The Erase operation is implemented in a single block unit (8 Kbytes + 256 bytes: 528 bytes ´ 16 pages).
The TC58V64B is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)