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Freescale Semiconductor Technical Data
MRF1511 Rev.
3, 3/2005
RF Power Field Effect
Transistor
N−Channel Enhancement−Mode Lateral MOSFET
Designed for broadband commercial and industrial applications at frequencies to 175 MHz.
The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.
5 volt portable FM equipment.
D • Specified Performance @ 175 MHz, 7.
5 Volts Output Power — 8 Watts Power Gain — 11.
5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.
5 Vdc, 175 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal G Impedance Para...