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MRF1511NT1

Part Number	MRF1511NT1
Manufacturer	Motorola
Description	RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Published	Apr 19, 2006
Detailed Description	( DataSheet : www.DataSheet4U.com ) Freescale Semiconductor Technical Data MRF1511 Rev. 3, 3/2005 RF Power Field Effe...
Datasheet	MRF1511NT1 PDF File

Overview

( DataSheet : www.
DataSheet4U.
com ) Freescale Semiconductor Technical Data MRF1511 Rev.
3, 3/2005 RF Power Field Effect Transistor N−Channel Enhancement−Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies to 175 MHz.
The high gain and broadband performance of this device makes it ideal for large−signal, common source amplifier applications in 7.
5 volt portable FM equipment.
D • Specified Performance @ 175 MHz, 7.
5 Volts Output Power — 8 Watts Power Gain — 11.
5 dB Efficiency — 55% • Capable of Handling 20:1 VSWR, @ 9.
5 Vdc, 175 MHz, 2 dB Overdrive • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal G Impedance Para...

Similar Datasheet

MRF1511NT1 RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET - Motorola

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