Part Number
|
HY57V281620HST |
Manufacturer
|
Hynix Semiconductor |
Description
|
(HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM |
Published
|
Apr 19, 2006 |
Detailed Description
|
( DataSheet : www.DataSheet4U.com )
0.1 : Hynix Change 0.2 : 143Mhz Add, Burst read single write mode correction
www.D...
|
Datasheet
|
HY57V281620HST
|
Overview
( DataSheet : www.
DataSheet4U.
com )
0.
1 : Hynix Change 0.
2 : 143Mhz Add, Burst read single write mode correction
www.
DataSheet4U.
com
www.
DataSheet4U.
com
HY57V281620HC(L/S)T
4 Banks x 2M x 16bits Synchronous DRAM
DESCRIPTION
The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve v...
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