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HY57V281620HST

Part Number	HY57V281620HST
Manufacturer	Hynix Semiconductor
Description	(HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM
Published	Apr 19, 2006
Detailed Description	( DataSheet : www.DataSheet4U.com ) 0.1 : Hynix Change 0.2 : 143Mhz Add, Burst read single write mode correction www.D...
Datasheet	HY57V281620HST PDF File

Overview

( DataSheet : www.
DataSheet4U.
com ) 0.
1 : Hynix Change 0.
2 : 143Mhz Add, Burst read single write mode correction www.
DataSheet4U.
com www.
DataSheet4U.
com HY57V281620HC(L/S)T 4 Banks x 2M x 16bits Synchronous DRAM DESCRIPTION The Hynix HY57V281620HC(L/S)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V281620HC(L/S)T is organized as 4banks of 2,097,152x16 HY57V281620HC(L/S)T is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve v...

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HY57V281620HST (HY57V281620HC(L/S)T) 4 Banks x 2M x 16-Bits SDRAM - Hynix Semiconductor

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