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K176


Part Number K176
Manufacturer V/O Electronorgtechnica
Title Logic IC
Description www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com ...
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K170 : The TK17010 is a single-supply operational amplifier capable of operating from a very low and very wide supply voltage range (VCC = 1.0 to 7 V). With its rail-to-rail structures, the input signal circuit can accept a very wide input voltage range (VIN = 0 to 1.4 VP-P). The TK17010 can also provide a very large output signal (VOUT(MAX) = 1.4 VP-P) while operating from a single 1.5 volt supply. This makes the TK17010 ideal for battery-operated equipment. The TK17010 is available in the very small SOT23L-6 Surface Mount Package. BLOCK DIAGRAM TK17010 VCC +INPUT NC GND -INPUT OUTPUT + ORDERING INFORMATION - TK17010M Tape/Reel Code TAPE/REEL CODE TL: Tape Left December 1999 TOKO, Inc. .

K170 : TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −40 10 400 125 −55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) .

K170 : The MK1704A is an upgraded version of the MK1704 and is recommended for all new designs. It offers more reduction in the frequency amplitude peaks, and will support frequencies up to 140 MHz. The MK1704A generates a low EMI output clock from a clock input. The part is designed to dither the LCD interface clock or other clocks for flat panel graphics controllers. The MK1704A uses ICS/MicroClock’s proprietary mixture of analog and digital Phase-Locked Loop (PLL) technology to synthesize the frequency, and our patented technique to spread the frequency spectrum of the output, thereby reducing the frequency amplitude peaks by several dB. We offer many other clocks for computers and computer peri.

K1700A : -55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 40°C; 90%-95% R.H.; 56 days 100°C to 0°C; Water-to-Water; 15 cycles 2 KV to 4 KV Threshold Solder dip; Meniscograph Criteria Mass spectro. 2 x 10-8 atmos. CC/sec He MIL-STD-202, Mtd 210A, Cond. C 260°C; 10 seconds: 1 inch/sec. MIL-STD-883, Mtd 2004.5, Cond. A, B1 Lead tension & bend stress MIL-STD-883, Mtd 2015.8 MIL-STD-883, Mtd 1005.6 Resistance to solvents 125°C, powered, 1000 hours minimum 2553 N. Edgington Street, Franklin Park, IL 60131 " Phone: 847.451.1000 " Fax: 847.451.7585 800-888-1499 or www.champtech.com 2 .

K1713 : .

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K1717 : Transistors Small switching (60V, 2A) 2SK1717 !Features 1) Low on resistance. 2) High-speed switching. 3) Optimum for a pocket resource etc. because of undervoltage actuation (2.5V actuation). 4) Driving circuit is easy. 5) Easy to use parallel. 6) It is strong to an electrostatic discharge. !Structure Silicon N-channel MOS FET transistor !External dimensions (Units : mm) 4.5+−00..21 1.6±0.1 1.5±0.1 0.5±0.1 4.0−+00..35 2.5+−00..21 ROHM : MPT3 E I A J : SC-62 1.0±0.3 (1) (2) (3) 0.4±0.1 1.5±0.1 0.5±0.1 3.0±0.2 0.4±0.1 1.5±0.1 Abbreviated symbol : KE 0.4−+00..015 (1) Gate (2) Drain (3) Source !Absolute maximum ratings (Ta = 25°C) Parameter Symbol Drain-source voltage VDSS .

K1720A : -55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 40°C; 90%-95% R.H.; 56 days 100°C to 0°C; Water-to-Water; 15 cycles 2 KV to 4 KV Threshold Solder dip; Meniscograph Criteria Mass spectro. 2 x 10-8 atmos. CC/sec He MIL-STD-202, Mtd 210A, Cond. C 260°C; 10 seconds: 1 inch/sec. MIL-STD-883, Mtd 2004.5, Cond. A, B1 Lead tension & bend stress MIL-STD-883, Mtd 2015.8 MIL-STD-883, Mtd 1005.6 Resistance to solvents 125°C, powered, 1000 hours minimum 2553 N. Edgington Street, Franklin Park, IL 60131 " Phone: 847.451.1000 " Fax: 847.451.7585 800-888-1499 or www.champtech.com 2 .

K1723 : ·Drain Current ID=12A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Fast Switching Speed APPLICATIONS ·Power supplies, converters and power motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 12 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) isc Product Specification 2SK1723.

K1724 : Ordering number:EN3819 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1724 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1724] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 3.0 1 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Brea.

K1725 : Ordering number:EN3820 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Meets radial taping. N-Channel Silicon MOSFET 2SK1725 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2087A [2SK1725] 2.5 1.45 6.9 1.0 4.0 1.0 4.5 1.0 0.9 1 Specifications 2.54 Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10µs, duty cycle≤1% Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain.

K17255B : -55°C to +125°C; Air-to-Air; 100 cycles; 10 min. dwell 1500 g’s 20-2000 Hz; 0.06 inch; 15g’s; 3 planes 40°C; 90%-95% R.H.; 56 days 100°C to 0°C; Water-to-Water; 15 cycles 2 KV to 4 KV Threshold Solder dip; Meniscograph Criteria Mass spectro. 2 x 10-8 atmos. CC/sec He MIL-STD-202, Mtd 210D, Cond. C 260°C; 10 seconds: 1 inch/sec. MIL-STD-883, Mtd 2004.5, Cond. A, B1 Lead tension & bend stress MIL-STD-883, Mtd 2015.8 MIL-STD-883, Mtd 1005.6 Resistance to solvents 125°C, powered, 1000 hours minimum 2553 N. Edgington Street, Franklin Park, IL 60131 y Phone: 847.451.1000 y Fax: 847.451.7585 800-888-1499 or www.champtech.com 2 .

K1726 : Ordering number:EN3821 Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. N-Channel Silicon MOSFET 2SK1726 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2062A [2SK1726] 4.5 1.6 1.5 1.0 2.5 4.25max 0.4 0.5 32 1.5 1 3.0 0.75 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C Mounted on a ceramic board (250mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Bre.




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