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SUP/SUB75N06-08
N-Channel Enhancement-Mode
Transistors
Product Summary
V(BR)DSS (V)
60 TO-220AB TO-263
G DRAIN connected to TAB G D S Top View SUB75N06-08 S N-Channel MOSFET
rDS(on) (W)
0.
008
ID (A)
75a
D
G D S Top View SUP75N06-08
Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)
com
Parameter Symbol
VGS TC = 25_C TC = 125_C ID IDM IAR
Limit
"20 75a 55 240 60 280 187c
Unit
V
Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Power Dissipation Energyb L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)d
A
EAR PD TJ, Tstg
mJ W
3.
7 –55 to 175 _C
Operating Jun...