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SUB75N06-12L

Part Number	SUB75N06-12L
Manufacturer	Vishay Siliconix
Description	N-Channel MOSFET
Published	Jun 22, 2006
Detailed Description	www.DataSheet4U.com SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) ...
Datasheet	SUB75N06-12L PDF File

Overview

www.
DataSheet4U.
com SUP/SUB75N06-12L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) 60 rDS(on) (W) 0.
012 @ VGS = 10 V 0.
014 @ VGS = 4.
5 V ID (A) 75 70 D TO-220AB TO-263 G DRAIN connected to TAB G G D S Top View SUP75N06-12L SUB75N06-12L N-Channel MOSFET D S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Power Dissipation L = 0.
1 mH TC = 25_C (TO-220AB and TO-263) TA = 25_C (TO-263)c TC = 25_C TC = 100_C www.
DataSheet4U.
com Symbol VDS VGS ID IDM IAR EAR PD PD TJ, Tstg Limit 60 "20 75 53 Unit V A 180 60 180 142b 3.
75c –55 to 175 W _C mJ Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)c Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a.
Duty cycle v 1%.
b.
See SOA curve for voltage derating.
c.
When mounted on 1” square PCB (FR-4 material).
Document Number: 70807 S-59182—Rev.
B, 07-Sep-98 www.
vishay.
com S FaxBack 408-970-5600 RthJC RthJA 62.
5 1.
05 Symbol Limit 40 Unit _C/W 2-1 www.
DataSheet4U DataSheet4U.
com www.
DataSheet4U.
com SUP/SUB75N06-12L Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125_C VDS = 60 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A VGS = 10 V, ID = 30 A, TJ = 125_C a D i S O S R i Drain-Source On-State Resistance Symbol Test Condition Min Typ Max Unit 60 V 1 2 "100 1 50 150 75 0.
0085 0.
012 0.
019 0.
024 0.
0105 0.
014 0.
0225 0.
03 25 60 S W A mA nA rDS(on) VGS = 10 V, ID = 30 A, TJ = 17...

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SUB75N06-12L N-Channel MOSFET - Vishay Siliconix

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