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GT20J321
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Chanenel IGBT
GT20J321
High Power Switching Applications Fast Switching Applications
• • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.
04 µs (typ.
) Low switching loss • • : Eon = 0.
40 mJ (typ.
) : Eoff = 0.
43 mJ (typ.
) Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) FRD included between emitter and collector Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperat...