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GT20J321

Toshiba Semiconductor
Part Number GT20J321
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel IGBT
Published Jul 10, 2006
Detailed Description www.DataSheet4U.com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Swi...
Datasheet PDF File GT20J321 PDF File

GT20J321
GT20J321

Overview
www.
DataSheet4U.
com GT20J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT20J321 High Power Switching Applications Fast Switching Applications • • • The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.
04 µs (typ.
) Low switching loss • • : Eon = 0.
40 mJ (typ.
) : Eoff = 0.
43 mJ (typ.
) Low saturation voltage: VCE (sat) = 2.
0 V (typ.
) FRD included between emitter and collector Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Emitter-collector forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms DC 1 ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg Rating 600 ±20 20 40 20 40 45 150 −55 to 150 Unit V V A JEDEC JEITA TOSHIBA ― ― 2-10R1C A W °C °C Weight: 1.
7 g (typ.
) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c...


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